It is therefore, in this study, we aim to reveal thermoelectric properties of Ge1−xSnx epitaxial layers with a wide range of Sn contents grown by low-temperature molecular beam epitaxy. Here, semi-insulating wafers of Si, GaAs, and InP were used as a substrate in order to isolate electrically from the substrates. Combined with the results for the polycrystalline films, we will establish a guideline for enhancing the zT value in narrow band-gap group-IV materials.
Acknowledgments: This work was partially supported by Grants-in-Aid for Scientific Research (S) (Grant No. 26220605) and Young Scientists (A) (Grant No. 17H04919) from JSPS in Japan and PRESTO (Grant No. JPMJPR15R2) from JST in Japan.
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