Strain Engineering

Wednesday, 3 October 2018: 08:30-10:10
Universal 13 (Expo Center)
Chair:
Atsushi Ogura
08:30
(Invited) Raman Stress Measurements at the Nanoscale
T. Nuytten, J. Bogdanowicz, I. Aslam (imec), L. Witters (Imec), G. Eneman (imec, Belgium), T. Hantschel, A. Schulze (imec), P. Favia, H. Bender (imec, Belgium), I. De Wolf, W. Vandervorst, and P. van der Heide (imec)
09:00
(Invited) A New Application of Ge1−xSnx: Thermoelectric Materials
M. Kurosawa (Nagoya University, JST-PRESTO), Y. Imai, T. Iwahashi (Nagoya University), K. Takahashi (Nagoya University, JSPS), M. Sakashita, O. Nakatsuka, and S. Zaima (Nagoya University)
09:30
Evaluation of Anisotropic Three-Dimensional Strain Relaxation in Stripe-Shaped Ge1-xSnx Mesa Structure
Y. Takahashi (Meiji University), R. Yokogawa (JSPS Research Fellow, Meiji University), T. Murakami (Meiji University), I. Hirosawa (Japan Synchrotron Radiation Research Institute), K. Suda, and A. Ogura (Meiji University)