Monday, 1 October 2018: 13:00
Universal 13 (Expo Center)
Atomically thin layers represent a novel class of materials with unique properties, like e.g. high electrical conductivity combined with high transparency in graphene or efficient light absorption and emission in transition metal dichalcogenides (TMDCs). Originally prepared by mechanical exfoliation for more basic scientific studies, recent developments in large area CVD growth techniques paved the path towards practical applications.
In this contribution some of our recent efforts on 2D materials for electronic and optoelectronic applications will be presented. This includes CVD growth of graphene on both, metallic and semiconducting substrates, and selected applications, e.g., as transparent electrode or in high frequency transistors. In addition, large area fabrication approaches of TMDCs via MOCVD growth will be demonstrated and the potential of these ultrathin semiconductors for light emitting devices in the red spectral range will be discussed. As powerful tools for nanoscale material and device analysis confocal optics and electrical scanning force microscopy have been applied.