Graphene and other layered 2D materials have been the focus of intense research in the last decade due to their unique physical and chemical properties. This presentation will highlight our recent progress on the synthesis and integration of 2D materials for nanoelectronics applications using atomic layer deposition (ALD). ALD is a chemical process that is based on self-limiting surface reactions and results in ultrathin films, with sub-nm control over the thickness and wafer-scale uniformity. In the first part of this presentation I will focus on the fabrication of low resistance contacts and ultrathin dielectrics to graphene using atomic layer deposition. In the second part I will show how we use plasma enhanced-ALD to synthesize large-area 2D transistion metal dichalcogenides for nanoelectronics applications.