Selectively-grown silicon deposited via reduced pressure chemical vapor deposition is a well-known epitaxial technique that is used in academia and industry. During a selective Si deposition process, epitaxial silicon is grown on single-crystal Si or poly Si seed layer while suppressing nucleation on dielectric surfaces. This technique is advantageous for BiCMOS development and cost reduction in SiGe manufacturing. GlobalFoundries has leadership in SiGe PA technologies for high-volume WiFi and cellular markets, and also in high performance SiGe technologies. For next generation SiGe PA, p+ selective silicon, or highly-boron-doped silicon, is one of the leading candidates to improve device performance to meet challenging customer demands. Optimizing this process, however, is a non-trivial task. The latest data for p+ selective silicon is discussed.