HBT

Tuesday, 2 October 2018: 10:30-12:10
Universal 13 (Expo Center)
Chair:
Alvin Joseph
10:30
1046
(Invited) Bicmos Technology Optimization for Millimeter Wave Applications
J. J. T. M. Donkers, T. V. Dinh, T. Vanhoucke, P. Weijs, I. Brunets, P. van Dijk, P. Sebel, P. Huiskamp, R. Werkman, R. Pijper, and P. H. C. Magnée (NXP Semiconductors)
11:00
1047
(Invited) Physics and Compact Modeling of SiGe HBT Linearity Using Mextram
G. Niu (AUBURN UNIVERSITY-ECE DEPT), H. Zhang (ECE Department, Auburn University), Y. Li (AUBURN UNIVERSITY-ECE DEPT), X. Ding (Auburn University-ECE DEPT), M. Willemsen, and A. Scholten (NXP)
11:30
1048
Improved Modeling of High Injection Substrate Current in High Voltage Bipolar Transistors
Y. Li, G. Niu (AUBURN UNIVERSITY-ECE DEPT), and W. Chen (Texas Instruments)
11:50
1049
Selective Silicon for Raised Extrinsic Base in PA Applications
P. Dongmo, C. Luce, V. Jain, Q. Liu, A. Raman, and J. Adkisson (Global Foundries)
See more of: G03: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 8
See more of: Electronic Materials and Processing
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