All the properties of semiconductor stable isotopes have been investigated and exploited in bulk materials or thin films. Herein, we will describe the new opportunities emerging from the combinations of the isotope effects with size-related effects in nanoscale materials [14-18]. More specifically, we will discuss phonon engineering in metal catalyzed silicon nanowires with tailor-made isotopic compositions grown using isotopically enriched silane and german precursors 28SiH4, 29SiH4, 30SiH4, 74GeH4 and 76GeH4, with purity better than 99.9%. Isotopically mixed nanowires 28Six30Si1-x with a composition close to the highest mass disorder (x ~ 0.5) were used as a playground to elucidate the interplay between nanoscale interface phenomena and heat transport [16]. We will show how isotopically engineered nanowire homo-junctions can be introduced to realize innovative phononic devices such as thermal diodes and thermal transistors. Additionally, we will also discuss the use of nuclear spin-full 29Si to engineer novel quantum devices in nuclear spin-free SiGe nanostructures. Finally, atomistic-level investigations of isotopically programmed nanoscale materials will be presented based on laser-assisted atom probe tomography [15,17].
References
[1] M. Cardona et al., Rev. Moden Phys. 77, 1173 (2005).
[2] E. E. Haller, MRS Bull. 31, 547 (2006).
[3] M. Hu et al., M. Phys. Rev. B 67, 113306 (2003).
[4] G. Davis et al., Semicond. Sci. Technol. 7, 1271 (1992).
[5] A. M. Tyryshkin et al., Nat. Mater. 11, 143 (2012).
[6] D. R. McCamey et al., Science 330, 1652 (2010).
[7] S. Simmons et al., Nature 470, 69 (2011).
[8] K. M. Itoh, Solid State Commun. 133, 747 (2005).
[9] V. I. Ozhogin et al., J. Exp. Theor. Phys. Lett. 63, 490 (1996).
[10] R. K. Kremer et al., J. Solid State Commun. 131, 499 (2004).
[11] H. Bracht et al., New J. Phys. 16, 015021 (2014).
[12] M. Nakajima et al., Phys. Rev. B 63, 161304 (2001).
[13] D. Morelli et al., Phys. Rev. B 66, 195304 (2002).
[14] O. Moutanabbir et al., Phys. Rev. Lett. 105, 026101 (2010)
[15] O. Moutanabbir et al., Appl. Phys. Lett. 98, 013111 (2011).
[16] S. Mukherjee et al., Nano Letters 15, 3885 (2015).
[17] S. Mukherjee et al., Nano Letters 16, 1335 (2016).
[18] S. Mukherjee et al., Nano Letters, under review (2018).