Thanks to the sub-60 mV/decade switching characteristics, negative capacitance transistors based on ferroelectric gate oxides can enable the reduction of power supply voltage and the power dissipation in future nodes. This talk will give an overview of the exciting developments in the field of negative capacitance over the past nine years starting from the theoretical prediction in 2008 to the clean experimental demonstration of this phenomenon in ferroelectric materials and transistors recently. All three aspects of this technology: physics, materials and devices will be discussed.