Ferroelectric Materials and Devices

Monday, 1 October 2018: 13:25-16:30
Universal 7 (Expo Center)
Chairs:
Edward Yi Chang and Koji Kita
13:25
Symposium Award Presentation
13:30
693
(Invited) Apprehension of Large Coercive Field in Ferroelectric HfO2 Thin Films
S. Migita (AIST)
14:00
694
(Invited) Surface Free Energy and Interfacial Strain in HfO2 and Hzo Ferroelectric Formation
E. Chagarov, M. Kavrik (University of California, San Diego), M. Katz, N. Stanford, A. Davydov (National Inst of Standards and Tech, Gaithersburg, MD), M. H. Lee (National Taiwan University, Taipei, Taiwan), and A. C. Kummel (University of California, San Diego)
14:30
695
(Invited) Technology Breakthrough by Ferroelectric HfO2 for Low Power Logic and Memory Applications
M. Kobayashi (Institute of Industrial Science, The University of Tokyo)
15:00
Break
15:10
696
(Invited) Teaching a New Dog Old Tricks:  Ferroelectric HfZrO Films and Devices
R. D. Clark (TEL Technology Center, America, LLC), K. Tapily (TEL Technology Centre, America, LLC), S. Consiglio (TEL Technology Center), C. S. Wajda (TEL Technology Center, America, LLC), K. Ni (University of Notre Dame), S. Dey, V. Mukundan, K. Beckman (SUNY Polytechnic Institute), G. J. Leusink (TEL Technology Center, America, LLC), N. Cady, A. C. Diebold (SUNY Polytechnic Institute), and S. Datta (University of Notre Dame)
15:40
697
(Invited) Ferroelectric Oxides and Negative Capacitance for Ultra-low Power Computing
A. Khan (Georgia Institute of Technology)
16:10
698
Chain Length Dependence of the Dielectric Constant and Polarizability in Conjugated Organic Thin Films
C. J. L. Van Dyck (Nanotechnology Research Centre), T. Marks, and M. A. Ratner (Northwestern University)
See more of: D01: Semiconductors, Dielectrics, and Metals for Nanoelectronics 16
See more of: Dielectric Science and Materials
<< Previous Session | Next Session >>