Oxygen, Nitrogen and Carbon in Silicon

Wednesday, 3 October 2018: 14:00-16:20
Universal 24 (Expo Center)
Chairs:
Gudrun Kissinger and Alain Claverie
14:00
1180
(Invited) Oxygen in Silicon: End of the Story?
G. Kissinger, D. Kot, M. A. Schubert, J. Dabrowski (IHP), A. Sattler, and T. Mueller (Siltronic AG)
14:30
1181
(Invited) Oxygen Precipitation in Highly Doped Silicon Substrates
M. Porrini, V. Voronkov, and A. Giannattasio (MEMC Electronic Materials, a GlobalWafers Company)
15:00
1182
Measurement of Low Concentration Nitrogen in Czochralski Silicon by Infrared Absorption Spectroscopy
N. Inoue (Tokyo University of Agriculture and Technology, Osaka Prefecture University), S. Okuda, and S. Kawamata (Osaka Prefecture University)
15:20
Break
15:40
1183
VOn Complexes in RTA Treated Czochralski Silicon Wafers Investigated by FTIR Spectroscopy
D. Kot, G. Kissinger, J. Dabrowski (IHP), and A. Sattler (Siltronic AG)
16:00
1184
Measurement of Low Carbon Concentration in Polycrystalline Silicon by Second Generation Infrared Absorption Spectroscopy
N. Inoue (Tokyo University of Agriculture and Technology, Osaka Prefecture University), S. Okuda, and S. Kawamata (Osaka Prefecture University)
See more of: H02: High Purity and High Mobility Semiconductors 15
See more of: Electronic and Photonic Devices and Systems
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