Semiconductor Dissolution

Tuesday, 2 October 2018: 14:00-16:00
Universal 2 (Expo Center)
Chairs:
David J Lockwood and Sachiko Ono
14:00
613
(Invited) Light Enhanced Metal Assisted Chemical Etching of Silicon
E. Quiroga-González (Institute of Physics, BUAP), M. Á. Juárez-Estrada, and E. Gómez-Barojas (Benemérita Universidad Autónoma de Puebla)
14:40
614
Hierarchical Porous Silicon and Porous Silicon Nanowires Produced with Regenerative Electroless Etching (ReEtching) and Metal Assisted Catalytic Etching (MACE)
K. W. Kolasinski, B. A. Unger (West Chester University), H. Yu (University of Connecticut, Honeywell UOP), A. T. Ernst, M. Aindow (University of Connecticut), E. Mäkilä, and J. Salonen (University of Turku)
15:00
615
Formation and Dissolution of Mesoporous Layer during Metal-Assisted Etching of Silicon
A. Matsumoto, M. Eguchi, and S. Yae (University of Hyogo)
15:20
616
(Invited) Photo-Assisted Etching of Porous Silicon Nanostructures in Hydrofluoric Acid Using Monochromatic Light
B. Gelloz (Nagoya University), H. Fuwa, E. Kondoh, and L. Jin (University of Yamanashi)
16:00
Break
See more of: C02: Pits & Pores 8: Nanomaterials – Fabrication, Properties, and Applications
See more of: Corrosion Science and Technology
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