Integration and Dielectric Bonding

Tuesday, 2 October 2018: 14:00-16:00
Universal 14 (Expo Center)
Chairs:
Frank Fournel and Subramanian Iyer
14:00
962
(Invited) High Accuracy Aligned Wafer Bonding for Wafer-Level Integration
T. Plach, B. Rebhan, V. Dragoi, T. Wagenleitner, M. Wimplinger, and P. Lindner (EV Group)
14:40
963
Interlayer Dielectric Bonding for 300mm Wafers
M. Fujino, K. Kikuchi, and K. Takahashi (Nat. Inst. Advanced Industrial Science and Technology)
15:00
964
Influence of Composition of SiCN Film for Surface Activated Bonding
F. Inoue, L. Peng, S. Iacovo, A. Phommahaxay, J. Visker, P. Verdonck, J. Meersschaut, P. Dara, E. Sleeckx, A. Miller, and E. Beyne (imec)
15:20
965
Ga2O3/Si and Al2O3/Si Room-Temperature Wafer Bonding Using in-Situ Deposited Si Thin Film
H. Takagi, Y. Kurashima, T. Matsumae, T. Ito, H. Watanabe, H. Umezawa, and S. Ohmagari (AIST)
15:40
966
Nanomechanical Properties of Germanium-on-Insulator (GeOI) Films
Y. Mohammed, K. Zhang (Old Dominion University), H. Baumgart (Old Dominion University, ECE Department), and A. A. Elmustafa (Old Dominion University)
See more of: G01: Semiconductor Wafer Bonding: Science, Technology, and Applications 15
See more of: Electronic Materials and Processing
<< Previous Session | Next Session >>