FET 2

Sunday, 30 September 2018: 16:00-17:40
Universal 13 (Expo Center)
Chair:
Aaron Thean
16:30
(Invited) Advanced Replacement High-K/Metal Gate Stack Engineering for High-Performance Strained Silicon-Germanium FinFETs with High Ge Content
P. Hashemi, T. Ando (IBM T. J. Watson Research Center), E. A. Cartier (IBM Research), J. Bruley (IBM T. J. Watson Research Center), C. H. Lee (IBM Research), and V. Narayanan (IBM T. J. Watson Research Center)
17:00
Strain Evaluation of Laser-Annealed SiGe Thin Layers
S. Komago, T. Murakami, K. Yoshioka (Meiji University), R. Yokogawa (JSPS Research Fellow, Meiji University), J. O. Borland (J.O.B. Technologies), T. Kuroi (Nissin Ion Equipment, Kyoto, Japan), T. Tabata, K. Huet (SCREEN-LASSE, Gennevilliers, France), N. Horiguchi (IMEC, Leuven, Belgium), and A. Ogura (Meiji University)
17:20
Investigation of Tm2O3 As a Gate Dielectric for Ge MOS Devices
L. Žurauskaitė (KTH Royal Institute of Technology), L. Jones, V. R. Dhanak, I. Z. Mitrovic (University of Liverpool), P. E. Hellström, and M. Östling (KTH Royal Institute of Technology)