Atomic Layer Deposition Materials

van der Straten, O.

Monday, 1 October 2018: 14:00-15:20

Universal 16 (Expo Center)

Chairs:

O. van der Straten and Stefan De Gendt

14:00

988

(Invited) A Comparative Study of Low-Temperature III-V Nitrides ALD in Thermal and Radical-Enhanced Modes

S. Banerjee and A. Y. Kovalgin (MESA+ Institute for Nanotechnology, University of Twente)

14:40

989

Ferroelectricity of Hf_xZr_1−xO₂ Thin Films Fabricated Using TiN Stressor and ZrO₂ Nucleation Techniques

T. Onaya (Meiji University, National Institute for Materials Science), T. Nabatame (National Institute for Materials Science), N. Sawamoto (Meiji University), K. Kurishima (Meiji University, National Institute for Materials Science), A. Ohi, N. Ikeda, T. Nagata (National Institute for Materials Science), and A. Ogura (Meiji University)

15:00

990

Optical, Structural, and Resistive Switching Characteristics of Atomic-Layer-Deposited ZnO Films with Their Thickness Variation

T. Lee, Y. Jung, S. Seong, S. Y. Kim, I. S. Park, and J. H. Ahn (Hanyang University)

See more of: G02: Atomic Layer Deposition Applications 14
See more of: Electronic Materials and Processing

<< Previous Session | Next Session >>