Atomic Layer Deposition Precursors

Tuesday, 2 October 2018: 09:20-10:20
Universal 16 (Expo Center)
Chairs:
Charles H. Winter and Andrea Illiberi
09:20
993
Low Temperature Thermal ALD of Silicon Nitride Utilizing a Novel High Purity Hydrazine Source
D. Alvarez Jr., K. Andachi (RASIRC), A. T. Lucero, A. Kondusamy, S. M. Hwang, X. Meng, H. Kim, J. Kim (University of Texas at Dallas), and J. Spiegelman (RASIRC)
09:40
Break
10:00
994
The SiO2 and SiNx Multilayer Thin Film Deposition for Encapsulation of OLED Using a NSi-01 Single Precursor By Peald
S. I. Lee (DNF Co., Ltd.), G. J. Park (DNF Co.,Ltd.), J. J. Park (DNF Co., Ltd.), S. J. Jang (DNF Co,. Ltd.), S. G. Kim (DNF Co.,Ltd.), and M. W. Kim (DNF Co., Ltd.)
See more of: G02: Atomic Layer Deposition Applications 14
See more of: Electronic Materials and Processing
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