Surfaces and Interfaces 2

Miyazaki, Seiichi

Thursday, 4 October 2018: 10:00-11:40

Universal 13 (Expo Center)

Chairs:

Seiichi Miyazaki and Paul C. McIntyre

10:00

1079

(Invited) Light Emission from Group IV Semiconductors

E. P. A. M. Bakkers (TU Eindhoven)

10:30

1080

HfO₂/Al₂O₃Nanolaminate on Si_0.7Ge_0.3(100) Surface by Thermal Atomic Layer Deposition

I. Kwak, K. Sardashti, M. S. Clemons, S. T. Ueda (University of California, San Diego), B. Fruhberger (CALIT2, University of San Diego), S. Oktyabrsky (SUNY College of Nanoscale Science and Engineering), and A. C. Kummel (University of California, San Diego)

11:00

1081

Physics of Fermi-Level “Unpinning” at Metal/Ge Interfaces; First-Principles View

T. Nakayama and T. Nishimoto (Department of Physics, Chiba University)

11:20

1082

Comparative Analysis of Ni- and Ni_0.9Pt_0.1-Ge_0.9Sn_0.1 Solid-State Reaction by Combined Characterizations Methods

A. Quintero (CEA LETI, CNRS, C2N, Universite Paris-Sud), P. Gergaud (Univ. Grenoble Alpes, CEA, LETI, 38000 Grenoble, France), J. Aubin (SCREEN-LASSE, 92230 Gennevilliers, France), J. M. Hartmann, N. Chevalier (Univ. Grenoble Alpes, CEA, LETI, 38000 Grenoble, France), V. Reboud (CEA, LETI, Grenoble, France), E. Cassan (University of Paris-Sud), and P. Rodriguez (CEA, LETI, MINATEC Campus)

See more of: G03: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 8
See more of: Electronic Materials and Processing

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