Low Temperature and Surface Activated Bonding

Wednesday, 3 October 2018: 10:20-12:00
Universal 14 (Expo Center)
Chairs:
Mark S. Goorsky and Kwang Hong Lee
10:20
972
(Invited) Low-Temperature Particle- and Printing Based Wafer Level Bonding Processes
M. Wiemer, T. Schroeder, D. Wuensch, T. Seifert, F. Roscher, E. Gross, and T. Otto (Fraunhofer Institute for Electronic Nanosystems)
11:00
973
Surface Activated Bonding -from the Standard SAB to Modified SAB
T. Suga (School of Engineering, Univ. Tokyo)
11:20
974
Surface Activated Bonding of LiNbO3 and GaN at Room Temperature
R. Takigawa (Kyushu University), E. Higurashi (AIST), and T. Asano (Kyushu University)
11:40
975
Investigation of Residual Strain in 4H-SiC/Si Heterostructures Fabricated By Surface Activated Bonding
J. Liang (Osaka City University), Y. Zhou (University of Bristol University), S. Yamajor (Osaka City University), M. Arai (New Japan Radio Co. Ltd.), M. Kuball (University of Bristol), and N. Shigekawa (Osaka City University)
See more of: G01: Semiconductor Wafer Bonding: Science, Technology, and Applications 15
See more of: Electronic Materials and Processing
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