Two Dimensional Materials 2

Tuesday, 2 October 2018: 10:20-12:10
Universal 20 (Expo Center)
Chairs:
Minghu Pan and Yung-Jung Hsu
10:50
Gate Stack Engineering in 2D Semiconductor FETs for Electronic Applications
H. Zhu, J. Xu, L. He, X. Nie, L. Chen, Q. Sun, and D. W. Zhang (Fudan University)
11:20
11:50
Quadrupole Gap Surface Plasmon Integrated Bilayer MoS2 for Excellent Photoelectrochemical Hydrogen Evolution
P. Sriram (Dept of Material Science and Eng., NTHU), A. Manikandan (Department of MSE, NTHU, Hsinchu, Taiwan), Y. L. Chueh (Department of Materials Science and Engineering, NTHU), and T. J. Yen (Dept of MSE NTHU)