Oxide TFT Fabrication Processes 2

Wednesday, 3 October 2018: 09:00-10:40
Universal 6 (Expo Center)
Chair:
Deji Akinwande
09:00
1218
(Invited) Low-Temperature Activation Method for InGaZnOx Thin-Film Transistors
M. Furuta (Kochi University of Technology, Japan), A. S. G. Mehadi, Y. Magari, and K. Daichi (Kochi University of Technology)
09:30
1219
(Invited) High Performance Amorphous In-W-Zn-O Thin Film Transistor with Ultra-Thin Active Channel for Low Voltage Operation
P. T. Liu, P. Y. Kuo, and S. M. Hsu (Department of Photonics, National Chiao Tung University)
10:00
1220
Back-Channel Etched Double Layer In-W-O/In-W-Zn-O Thin-Film Transistors
Z. H. Li, P. Y. Kuo, W. T. Chen, and P. T. Liu (Department of Photonics, National Chiao Tung University)
10:20
1221
Channel-Length Dependent Performance Degradation of Thermally Stressed IGZO TFTs
M. S. Kabir, P. Ganesh, R. R. Chowdhury, H. Sethupathi, J. Okvath, J. Konowitch (Rochester Institute of Technology), R. G. Manley (Corning Research and Development Corporation), and K. D. Hirschman (Rochester Institute of Technology)
See more of: H03: Thin Film Transistor Technologies 14 (TFTT 14)
See more of: Electronic and Photonic Devices and Systems
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