858
Limiting Factors of Channel Mobility in III-V/Ge MOSFETs

Monday, May 13, 2013: 15:40
Norfolk, Mezzanine Level (Sheraton)
Shinichi Takagi , The University of Tokyo
Sang-Hyeon Kim , The University of Tokyo
Rui Zhang , The University of Tokyo
Noriyuki Taoka , The University of Tokyo
Masafumi Yokoyama , The University of Tokyo
Mitsuru Takenaka , The University of Tokyo

Abstract:

  • E5-0858 (145.4KB) - Abstract Text
See more of: High Mobility Channels
See more of: E5: Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
<< Previous Abstract | Next Abstract