High Mobility Channels

Monday, May 13, 2013: 13:20-16:20
Norfolk, Mezzanine Level (Sheraton)
Chairs:
Kuniyuki Kakushima and Vijay Narayanan
13:20
854
(Invited) The Materials Integration of Ge and InxGa1-X As on Si Template for Next Generation CMOS Applications
Edward Yi Chang, National Chiao Tung University; Shih Hsuan Tang, National Chiao Tung University; Yueh-Chin Lin, National Chiao Tung University
14:00
855
(Electronics & Photonics Division Award Presentation) Si-SiO2 Interface to High-K-Ge/III-V Interface: Passivation and Reliability
Durga Misra, Ph.D., New Jersey Institute of Technology
14:40
856
(Invited) III-V/Ge CMOS Device Technologies for High Performance Logic Applications
Shinichi Takagi, The University of Tokyo; Masafumi Yokoyama, The University of Tokyo; Sang-Hyeon Kim, The University of Tokyo; Rui Zhang, The University of Tokyo; Rena Suzuki, The University of Tokyo; Noriyuki Taoka, The University of Tokyo; Mitsuru Takenaka, The University of Tokyo
15:00
857
(Invited) A Brief Review of Doping Issues in III-V Semiconductors
Kevin S Jones, Ph.D., University of Florida; Aaron G. Lind, University of Florida; Chris Hatem, Applied Materials; Steve Moffatt, Applied Materials; Mark C. Ridgeway, Australian National University
15:40
858
Limiting Factors of Channel Mobility in III-V/Ge MOSFETs
Shinichi Takagi, The University of Tokyo; Sang-Hyeon Kim, The University of Tokyo; Rui Zhang, The University of Tokyo; Noriyuki Taoka, The University of Tokyo; Masafumi Yokoyama, The University of Tokyo; Mitsuru Takenaka, The University of Tokyo
See more of: E5: Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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