Germanium Nanostructures and Devices

Tuesday, May 14, 2013: 08:30-12:10
Provincial Ballroom North, Second Floor (Sheraton)
Chairs:
Geert Eneman and David J. Lockwood
08:30
743
(Invited) Photoluminescence Efficiency of Germanium Dots Self-Assembled on Oxides
David J. Lockwood, National Research Council Canada; Nelson L. Rowell, National Research Council Canada; Eric G. Barbagiovanni, Western University; Lyudmila V. Goncharova, Western University; Peter J. Simpson, Western University; Isabelle Berbezier, Institut Matériaux Microélectronique Nanosciences de Provence; Guillaume Amiard, Institut Matériaux Microélectronique Nanosciences de Provence; Luc Favre, Institut Matériaux Microélectronique Nanosciences de Provence; Antoine Ronda, Institut Matériaux Microélectronique Nanosciences de Provence; Marco Faustini, Collège de France; David Grosso, Collège de France
09:00
744
Tensor Evaluation of Stress Relaxation Profile in Strained SiGe Nanostructures on Si Substrate
Motohiro Tomita, Research Fellow of the Japan Society for the Promotion of Science; Daisuke Kosemura, Meiji University; Koji Usuda, Collaborative Research Team Green Nanoelectronics Center, AIST; Atsushi Ogura, Meiji University
09:20
745
(Invited) Structural and Optical Properties of Si/Ge Nanowire Heterojunctions
Leonid Tsybeskov, New Jersey Institute of Technology; H.-Y. Chang, New Jersey Institute of Technology; Selina Mala, New Jersey Institute of Technology; Ted I. Kamins, Stanford University; Xiaohua Wu, National Research Council Canada; David J. Lockwood, National Research Council Canada
09:50
Coffee Break
10:10
746
(Invited) Stress Simulations of Si- and Ge-Channel FinFETs for the 14 nm-Node and Beyond
Geert Eneman, imec; David P. Brunco, imec; Liesbeth Witters, imec; Benjamin Vincent, imec; Paola Favia, imec; Andriy Hikavyy, imec; An De Keersgieter, imec; Jerome Mitard, imec; Roger Loo, imec; Anabela Veloso, Imec; Olivier Richard, imec; Hugo Bender, imec; Wilfried Vandervorst, imec; Matty Caymax, imec; Naoto Horiguchi, Imec; Nadine Collaert, PhD, imec; Aaron Thean, imec
10:40
747
(Invited) Germanium Nanostructures in High-K Materials
Peter Seidel, Institut für Angewandte Physik, TU Bergakademie Freiberg, 09599 Freiberg, Germany; Maximilian Geyer, Institut für Angewandte Physik, TU Bergakademie Freiberg, 09599 Freiberg, Germany; David Lehninger, Institut für Angewandte Physik, TU Bergakademie Freiberg, 09599 Freiberg, Germany; Frank Schneider, Institut für Angewandte Physik, TU Bergakademie Freiberg, 09599 Freiberg, Germany; Volker Klemm, Institut für Werkstoffwissenschaften, TU Bergakademie Freiberg, 09599 Freiberg, Germany; Johannes Heitmann, Institut für Angewandte Physik, TU Bergakademie Freiberg, 09599 Freiberg, Germany
11:10
748
GeSn Film Deposition Using Metal Organic Chemical Vapor Deposition
Kohei Suda, Meiji University; Tomohiro Uno, Meiji University; Tatsuya Miyakawa, Meiji University; Hideaki Machida, Gas-phase Growth Ltd.; Masato Ishikawa, Gas-phase Growth Ltd.; Hiroshi Sudo, Gas-phase Growth Ltd.; Yoshio Ohshita, Toyota Technological Institute; Atsushi Ogura, Meiji University
11:30
749
Identification of Deep Levels Associated with Extended and Point Defects in GeSn Epitaxial Layers Using DLTs
Somya Gupta, IMEC, Belgium; Eddy Simoen, IMEC, Belgium; Henk Vrielinck, University of Gent, Belgium; Clement Merckling, IMEC, Belgium; Benjamin Vincent, IMEC, Belgium; Federica Gencarelli, IMEC, Belgium; Roger Loo, IMEC, Belgium; Marc Heyns, imec
11:50
750
Semi-Metal Nanowire Transistors from First Principle Calculations
Lida Ansari, Tyndall National Institute; Giorgos Fagas, PhD, Tyndall National Institute; James C. Greer, PhD, Tyndall National Institute