2245
(Invited) Characterization of Oxide Traps Participating in Random Telegraph Noise Using Charging History Effects in Nano-Scaled MOSFETs

Wednesday, October 30, 2013: 14:00
Continental 7, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Toshiaki Tsuchiya , Shimane University, Matsue, Japan
Naoyoshi Tamura , Semiconductor Technology Academic Research Center
Akihito Sakakidani , Semiconductor Technology Academic Research Center
Kenichiro Sonoda , Semiconductor Technology Academic Research Center
Masayuki Kamei , Semiconductor Technology Academic Research Center
Shinya Yamakawa , Semiconductor Technology Academic Research Center
Sumio Kuwabara , Semiconductor Technology Academic Research Center

Abstract:

See more of: Device Characterization
See more of: E12: ULSI Process Integration 8
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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