Device Characterization

Wednesday, October 30, 2013: 14:00-15:50
Continental 7, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Chairs:
Toshiaki Tsuchiya and Junichi Murota
14:00
2245
(Invited) Characterization of Oxide Traps Participating in Random Telegraph Noise Using Charging History Effects in Nano-Scaled MOSFETs
Toshiaki Tsuchiya, Shimane University; Naoyoshi Tamura, Semiconductor Technology Academic Research Center; Akihito Sakakidani, Semiconductor Technology Academic Research Center; Kenichiro Sonoda, Semiconductor Technology Academic Research Center; Masayuki Kamei, Semiconductor Technology Academic Research Center; Shinya Yamakawa, Semiconductor Technology Academic Research Center; Sumio Kuwabara, Semiconductor Technology Academic Research Center
14:30
2246
Low-Frequency-Noise-Based Oxide Trap Profiling in Replacement High-k/Metal-Gate pMOSFETs
Eddy Roger Simoen, Imec; Jae-Woo Lee, Dr., Imec; Anabela Veloso, Imec; Vasile Paraschiv, Imec; Naoto Horiguchi, Imec; Cor Claeys, Imec
14:50
2247
Resistive Switching Properties of SiOx/TiO2 Multi-Stack in Ti-Electrode MIM Diodes
Akio Ohta, Hiroshima University; Katsunori Makihara, Nagoya University; Motoki Fukusima, Nagoya University; Hideki Murakami, Hiroshima University; Seiichiro Higashi, Hiroshima University; Seiichi Miyazaki, Nagoya University
15:10
2248
Reduction of Interface States Density Due to Post Oxidation with Formation of AlGeO Layer at Al2O3/Ge Interface
Shigehisa Shibayama, Master, Nagoya University; Kimihiko Kato, PhD, Nagoya University; Mitsuo Sakashita, Bachelor degree, Nagoya University; Wakana Takeuchi, PhD, Nagoya University; Noriyuki Taoka, PhD, Nagoya University; Osamu Nakatsuka, PhD, Nagoya University; Shigeaki Zaima, PhD, Nagoya University
15:30
2249
High Electron Mobility in Germanium Junctionless n-MOSFETs
Shoichi Kabuyanagi, Department of Materials Engineering, School of Engineering, The University of Tokyo; Tomonori Nishimura, Department of Materials Engineering, School of Engineering, The University of Tokyo; Kosuke Nagashio, Department of Materials Engineering, School of Engineering, The University of Tokyo; Akira Toriumi, Department of Materials Engineering, School of Engineering, The University of Tokyo
See more of: E12: ULSI Process Integration 8
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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