2248
Reduction of Interface States Density Due to Post Oxidation with Formation of AlGeO Layer at Al2O3/Ge Interface

Wednesday, October 30, 2013: 15:10
Continental 7, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Shigehisa Shibayama, Master , Nagoya University, Nagoya, Japan
Kimihiko Kato, PhD , Nagoya University
Mitsuo Sakashita, Bachelor degree , Nagoya University
Wakana Takeuchi, PhD , Nagoya University
Noriyuki Taoka, PhD , Nagoya University
Osamu Nakatsuka, PhD , Nagoya University, Nagoya, Japan
Shigeaki Zaima, PhD , Nagoya University

Abstract:

See more of: Device Characterization
See more of: E12: ULSI Process Integration 8
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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