2249
High Electron Mobility in Germanium Junctionless n-MOSFETs

Wednesday, October 30, 2013: 15:30
Continental 7, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Shoichi Kabuyanagi , Department of Materials Engineering, School of Engineering, The University of Tokyo, Tokyo, Japan
Tomonori Nishimura , Department of Materials Engineering, School of Engineering, The University of Tokyo, Tokyo, Japan
Kosuke Nagashio , Department of Materials Engineering, School of Engineering, The University of Tokyo
Akira Toriumi , Department of Materials Engineering, School of Engineering, The University of Tokyo

Abstract:

See more of: Device Characterization
See more of: E12: ULSI Process Integration 8
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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