2247
Resistive Switching Properties of SiOx/TiO2 Multi-Stack in Ti-Electrode MIM Diodes

Wednesday, October 30, 2013: 14:50
Continental 7, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Akio Ohta , Hiroshima University, Higashi-Hiroshima, Japan
Katsunori Makihara , Nagoya University
Motoki Fukusima , Nagoya University
Hideki Murakami , Hiroshima University
Seiichiro Higashi , Hiroshima University
Seiichi Miyazaki , Nagoya University, Nagoya, Japan

Abstract:

See more of: Device Characterization
See more of: E12: ULSI Process Integration 8
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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