STTMRAM 1

Wednesday, October 30, 2013: 14:00-15:40
Golden Gate 1, Tower 3, Lobby Level (Hilton San Francisco Union Square)
Chairs:
Yoshishige Suzuki and K-J. Lee
14:00
1995
Challenges of Stt-Mram for High Density Memory
S. C. Oh, Semiconductor R&D Center, SAMSUNG ElECTRONICS Co., Ltd
14:30
1996
Magnetization Switching Using Spin Orbit Torques in Cofeb|MgO Magnetic Heterostructures
Masamitsu Hayashi, Ph.D, National Institute for Materials Science
15:00
1997
Effect of Pt Capping Layer On Perpendicular-Magnet Anisotropy in Cofeb-MgO-Cofeb Magnetic Tunnel Junction
Du-Yeong Lee, M.S., Hanyang University; Tae-Hun Shim, Ph.D., Hanyang University; Jea-Gun Park, PhD, Hanyang University
15:20
1998
Comparison of Ta, Pt and Ti Capping Layer On Perpendicular Magnetic Anisotropy in Cofeb-MgO-Cofeb Magnetic-Tunnel-Junction
Seung-Eun Lee, B.S., Hanyang University; Du-Yeong Lee, M.S., Hanyang University; Min-Su Jeon, B.S., Hanyang University; Yasutaka Takemura, M.S., SUMCO Corporation; Kyo-suk Chae, M.S., Samsung Electronics Co., Ltd.; Tae-Hun Shim, Ph.D., Hanyang University; Jea-Gun Park, PhD, Hanyang University
See more of: E5: Nonvolatile Memories
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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