2169
		High Quality SiGe:B of High Ge Layer for 14nm and Beyond FINFET Processes
	
					
	
	High Quality SiGe:B of High Ge Layer for 14nm and Beyond FINFET Processes
	Tuesday, October 29, 2013
	Grand Ballroom, Tower 2, Grand Ballroom Level (Hilton San Francisco Union Square)
	
	
	
	Abstract:
- E10-2169 (142.1KB) - Abstract Text
