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High Quality SiGe:B of High Ge Layer for 14nm and Beyond FINFET Processes
High Quality SiGe:B of High Ge Layer for 14nm and Beyond FINFET Processes
Tuesday, October 29, 2013
Grand Ballroom, Tower 2, Grand Ballroom Level (Hilton San Francisco Union Square)
Abstract:
- E10-2169 (142.1KB) - Abstract Text