2170
Schottky Barrier Height between Erbium Silicide and Various Morphology of Si(100) Surface Changed by Alkaline Etching

Tuesday, October 29, 2013
Grand Ballroom, Tower 2, Grand Ballroom Level (Hilton San Francisco Union Square)
Hiroaki Tanaka, Ph. D. , Tohoku University, Sendai, Japan
Akinobu Teramoto, Ph. D. , Tohoku University
Shigetoshi Sugawa, Ph. D. , Tohoku University
Tadahiro Ohmi, Ph. D. , Tohoku University

Abstract:

See more of: E10 Poster Session
See more of: E10: Semiconductors, Dielectrics, and Metals for Nanoelectronics 11
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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