2128
Micro Unetched Oxide Defect during Buffered Oxide Etchant Process

Tuesday, October 29, 2013
Grand Ballroom, Tower 2, Grand Ballroom Level (Hilton San Francisco Union Square)
SeungTaek Lim, Bachelor , Memory Cleaning/CMP Technology Team, Memory Division, Semiconductor Business, Samsung Electronics Co., LTD.,, Hwasung, Gyeonggi, South Korea
Dukmin Ahn, Master , Memory Cleaning/CMP Technology Team, Memory Division, Semiconductor Business, Samsung Electronics Co., LTD.,
Kihyun Kim, Master , Memory Cleaning/CMP Technology Team, Memory Division, Semiconductor Business, Samsung Electronics Co., LTD.,
Heechan Jung, Bachelor , Memory Cleaning/CMP Technology Team, Memory Division, Semiconductor Business, Samsung Electronics Co., LTD.,
Byoungsu Lee, Bachelor , Memory Cleaning/CMP Technology Team, Memory Division, Semiconductor Business, Samsung Electronics Co., LTD.,
Huihwan Lee, Bachelor , Memory Cleaning/CMP Technology Team, Memory Division, Semiconductor Business, Samsung Electronics Co., LTD.,
Hasub Hwang , Memory Cleaning/CMP Technology Team, Memory Division, Semiconductor Business, Samsung Electronics Co., LTD.,

Abstract:

  • E8-2128 (222.5KB) - Abstract Text
See more of: Poster
See more of: E8: Semiconductor Cleaning Science and Technology 13 (SCST 13)
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
<< Previous Abstract | Next Abstract