1911
High Performance Normally-off GaN MOSFETs on Si Substrates
Tuesday, October 29, 2013: 08:40
Continental 9, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Hiroshi Kambayashi, Ph. D
,
Furukawa Electric Co., Ltd., Yokohama, Japan
Nariaki Ikeda
,
Furukawa Electric Co., Ltd.
Takehiko Nomura
,
Furukawa Electric Co., Ltd.
Hirokazu Ueda
,
Tokyo Electron Ltd.
Y. Morozumi
,
Tokyo Electron Ltd.
Katsushige Harada
,
Tokyo Electron Tohoku Ltd.
Kazuhide Hasebe
,
Tokyo Electron Tohoku Ltd.
Akinobu Teramoto, Ph. D.
,
Tohoku University
Shigetoshi Sugawa, Ph. D.
,
Tohoku University
Tadahiro Ohmi, Ph. D.
,
Tohoku University
