Tuesday, October 29, 2013: 08:00-10:00
Continental 9, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Chairs:
Kenneth A. Jones
and
Ibrahim Abdel-Motaleb, PhD
08:20
Normally-Off GaN Transistors for Power Switching Applications
Oliver Hilt, Leibniz-Institut fuer Hoechstfrequenztechnik;
Eldad Bahat-Treidel, Leibniz-Institut fuer Hoechstfrequenztechnik;
Frank Brunner, Leibniz-Institut fuer Hoechstfrequenztechnik;
Arne Knauer, Leibniz-Institut fuer Hoechstfrequenztechnik;
Rimma Zhytnytska, Leibniz-Institut fuer Hoechstfrequenztechnik;
Przemyslaw Kotara, Leibniz-Institut fuer Hoechstfrequenztechnik;
Joachim Wuerfl, Leibniz-Institut fuer Hoechstfrequenztechnik
08:40
High Performance Normally-off GaN MOSFETs on Si Substrates
Hiroshi Kambayashi, Ph. D, Furukawa Electric Co., Ltd.;
Nariaki Ikeda, Furukawa Electric Co., Ltd.;
Takehiko Nomura, Furukawa Electric Co., Ltd.;
Hirokazu Ueda, Tokyo Electron Ltd.;
Y. Morozumi, Tokyo Electron Ltd.;
Katsushige Harada, Tokyo Electron Tohoku Ltd.;
Kazuhide Hasebe, Tokyo Electron Tohoku Ltd.;
Akinobu Teramoto, Ph. D., Tohoku University;
Shigetoshi Sugawa, Ph. D., Tohoku University;
Tadahiro Ohmi, Ph. D., Tohoku University
09:00
Ultra-Thin Gate Dielectrics for Leakage Current Suppression in Vertically-Scaled GaN MIS-Hemts
David J. Meyer, U.S. Naval Research Laboratory;
Brian P. Downey, U.S. Naval Research Laboratory;
D. Scott Katzer, U.S. Naval Research Laboratory;
Jason A. Roussos, U.S. Naval Research Laboratory;
David F. Storm, U.S. Naval Research Laboratory;
Mario G. Ancona, U.S. Naval Research Laboratory;
Charles R. Eddy Jr., Naval Research Laboratory;
Steven C. Binari, U.S. Naval Research Laboratory;
Ming Pan, IQE RF LLC;
Xiang Gao, IQE RF LLC
09:20
Characterization and Performance of D-Mode GaN HEMT Transistor Used in a Cascode Configuration
Tom MacElwee, BASc EE, GaN Systems Inc.;
John Roberts, BASc EE, M.Sc.A, GaN Systems Inc.;
Hugues Lafontaine, B. Eng M.Sc.A. Ph.D., GaN Systems Inc.;
I. Scott, GaN Systems Inc.;
Greg Klowak, BASc EE, M.Sc.A, GaN Systems Inc.;
Lyubov Yushyna, Ph.D., GaN Systems Inc.
