1913
Characterization and Performance of D-Mode GaN HEMT Transistor Used in a Cascode Configuration

Tuesday, October 29, 2013: 09:20
Continental 9, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Tom MacElwee, BASc EE , GaN Systems Inc., Ottawa, ON, Canada
John Roberts, BASc EE, M.Sc.A , GaN Systems Inc.
Hugues Lafontaine, B. Eng M.Sc.A. Ph.D. , GaN Systems Inc.
I. Scott , GaN Systems Inc.
Greg Klowak, BASc EE, M.Sc.A , GaN Systems Inc.
Lyubov Yushyna, Ph.D. , GaN Systems Inc.

Abstract:

See more of: GaN Power Devices 1
See more of: E3: GaN and SiC Power Technologies 3
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
<< Previous Abstract | Next Abstract >>