1912
Ultra-Thin Gate Dielectrics for Leakage Current Suppression in Vertically-Scaled GaN MIS-Hemts

Tuesday, October 29, 2013: 09:00
Continental 9, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
David J. Meyer , U.S. Naval Research Laboratory, Washington, DC
Brian P. Downey , U.S. Naval Research Laboratory
D. Scott Katzer , U.S. Naval Research Laboratory
Jason A. Roussos , U.S. Naval Research Laboratory
David F. Storm , U.S. Naval Research Laboratory
Mario G. Ancona , U.S. Naval Research Laboratory
Charles R. Eddy Jr. , 4555 Overlook Ave., SW, Naval Research Laboratory, Washington, DC
Steven C. Binari , U.S. Naval Research Laboratory
Ming Pan , IQE RF LLC
Xiang Gao , IQE RF LLC

Abstract:

  • E3-1912 (351.2KB) - Abstract Text
See more of: GaN Power Devices 1
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See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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