2107
Chemical Improvement of EUV Ruthenium Capping Layer Against Active Oxygen and Hydroxyl Radicals

Monday, October 28, 2013: 16:20
Continental 8, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Hanshin Lee , Samsung Electronics, Hwasung-City, South Korea
Jaehyuck Choi , Samsung Electronics
Soowan Koh , Samsung Electronics
Jinsu Kim , Samsung Electronics
Dohyung Kim , Samsung Electronics
Junyoul Choi , Samsung Electronics
Hyoyeon Kim , Samsung Electronics
Hyungho Ko , Samsung Electronics
Byung Gook Kim , Samsung Electronics
Chan-Uk Jeon , Samsung Electronics

Abstract:

  • E8-2107 (334.6KB) - Abstract Text
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