Monday, October 28, 2013: 14:00-16:40
Continental 8, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Chairs:
Srini Raghavan
and
Harald F. Okorn-Schmidt
14:20
Silicon and SiGe Alloys Wet Etching Using TMAH Chemistry
Virginie Loup, CEA-LETI MINATEC;
Laurence Gabette, CEA-LETI MINATEC;
Marie-Christine Roure, CEA-LETI MINATEC;
Riadh Kachtouli, CEA-LETI MINATEC;
Marine Jourdan, CEA-LETI MINATEC;
Pascal Besson, STMicroelectronics;
Sebastien Petitdidier, STMicroelectronics
14:40
A Study on the Removal Method of Si Residue during Si Wet Etching
Kihyung Ko, Samsung Electronics Co. ; Sungkunkwan University;
Hayoung Jeon, Process Development Team, Semiconductor R&D Center, Samsung Electronics Co;
Myunggeun Song, Process Development Team, Semiconductor R&D Center, Samsung Electronics Co;
Jeongnam Han, Samsung Electronics Co.;
Boun Yoon, Process Development Team, Semiconductor R&D Center, Samsung Electronics Co;
Siyoung Choi, Ph.D, SAMSUNG ELECTRONICS Co., Ltd.;
Hokyu Kang, Samsung Electronics Co.;
Chilgi Lee, Doctor, School of Information and Communication Engineering, Sungkyunkwan University;
Taesung Kim, Doctor, Sungkyunkwan University
16:00
Challenges and Solutions for 450mm FEOL Wet Clean Tool
Bill Yu, Ph.D, G450C;
Felix Ku, G450C;
Charles Taft, G450C;
Anne-Sophie Larrea, G450C;
John Lin, Ph.D, G450C;
Toyohide Hayashi, Dainippon Screen;
Akira Morita, Dainippon Screen;
Kenichiro Arai, Dainippon Screen;
Hideji Naohara, Dainippon Screen
16:20
Chemical Improvement of EUV Ruthenium Capping Layer Against Active Oxygen and Hydroxyl Radicals
Hanshin Lee, Samsung Electronics;
Jaehyuck Choi, Samsung Electronics;
Soowan Koh, Samsung Electronics;
Jinsu Kim, Samsung Electronics;
Dohyung Kim, Samsung Electronics;
Junyoul Choi, Samsung Electronics;
Hyoyeon Kim, Samsung Electronics;
Hyungho Ko, Samsung Electronics;
Byung Gook Kim, Samsung Electronics;
Chan-Uk Jeon, Samsung Electronics