2109
Evaluation of TaN as the Wet Etch Stop Layer during the 22nm HKMG Gate Last CMOS Integrations

Tuesday, October 29, 2013: 10:00
Continental 8, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Hushan Cui , Chinese Academy of Sciences, Beijing, China
Jing Xu , Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China
Jianfeng Gao , Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences
Jinjuan Xiang , Chinese Academy of Sciences, Beijing, China
Yihong Lu , Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences
Zhaoyun Tang , Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences
Xiaobin He , Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences
Tingting Li , Chinese Academy of Sciences
Jun Luo , Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences
Xiaolei Wang , Chinese Academy of Sciences
Bo Tang , Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences
Jiahan Yu , Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences
Tao Yang , Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences
Jiang Yan , Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences
Junfeng Li , Chinese Academy of Sciences
Chao Zhao , Chinese Academy of Sciences

Abstract:

  • E8-2109 (165.1KB) - Abstract Text