FEOL & BEOL Cleaning

Tuesday, October 29, 2013: 08:50-12:00
Continental 8, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Chairs:
Paul W. Mertens and Akshey Sehgal
08:50
Introductory Remarks
09:40
Coffee Break
10:00
Evaluation of TaN as the Wet Etch Stop Layer during the 22nm HKMG Gate Last CMOS Integrations
Hushan Cui, Chinese Academy of Sciences; Jing Xu, Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences; Jianfeng Gao, Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences; Jinjuan Xiang, Chinese Academy of Sciences; Yihong Lu, Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences; Zhaoyun Tang, Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences; Xiaobin He, Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences; Tingting Li, Chinese Academy of Sciences; Jun Luo, Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences; Xiaolei Wang, Chinese Academy of Sciences; Bo Tang, Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences; Jiahan Yu, Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences; Tao Yang, Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences; Jiang Yan, Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences; Junfeng Li, Chinese Academy of Sciences; Chao Zhao, Chinese Academy of Sciences
10:20
Lanthanum Interaction with Surface Preparations
Philippe Garnier, STMicroelectronics; Vincent Joseph, STMicroelectronics; Remi Krachewski, STMicroelectronics
10:40
Integration of Wet Cleaning in 45 Nm Pitch BEOL Processing
Els Kesters, imec; Quoc Toan Le, imec; Frederic Lazzarino, imec; Stefan Decoster, imec; Chris Wilson, imec; Ihsan Simms, Tokyo Electron; Frank Holsteyns, imec; Stefan De Gendt, KU Leuven
11:00
Effective Defect Control in TiN Metal Hard Mask Cu/Low-k Dual Damascene Process
Alexander Kabansky, PhD, Lam Research Corporation; Samantha S.H. Tan, PhD, Lam Research Corporation; Eric A. Hudson, PhD, Lam Research Corporation; Gerardo Delgadino, PhD, Lam Research Corporation; Lajos Gancs, PhD, Lam Research Corporation; Jeffrey Marks, PhD, Lam Research Corporation
11:20
Inhibition of Copper Corrosion by Removal of H2O2 From CO2-Dissolved Water Using Palladium Catalysts
Daisaku Yano, Organo Corporation; Masami Murayama, Organo Corporation; Masao Takahashi, ISIR, Osaka University; Hikaru Kobayashi, ISIR, Osaka University; Koji Yamanaka, Organo Corporation
11:40
Monitoring of  Polymer Removal Process  for Copper Interconnect
Eugene Shalyt, Ph.D., ECI Technology; Guang Liang, B.Sc., ECI Technology; Jingjing Wang, Ph.D., ECI Technology; Michael Pavlov, M.Sc., ECI Technology; Vladimir Dozortsev, Ph.D., ECI Technology; Chuannan Bai, Ph.D., ECI Technology; Peter Bratin, Ph.D., ECI Technology