1898
Properties of Al-SiO2-SiC(3C) Structures with Thermally Grown and PECVD Deposited SiO2 Layers

Monday, October 28, 2013: 10:20
Continental 9, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Henryk Maria Przewlocki, Ph.D., D.Sc. , Institute of Electron Technology, Warsaw, Poland
Tomasz Gutt, Ph.D. , Institute of Electron Technology
Krzysztof Piskorski, M.Sc. , Institute of Electron Technology
Pawel Borowicz, Ph.D. , Institute of Electron Technology
Mietek Bakowski , Acreo AB

Abstract:

  • E3-1898 (154.9KB) - Abstract Text
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