Monday, October 28, 2013: 10:00-12:00
Continental 9, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Chairs:
A. Lelis
and
Sarit Dhar
10:20
Properties of Al-SiO2-SiC(3C) Structures with Thermally Grown and PECVD Deposited SiO2 Layers
Henryk Maria Przewlocki, Ph.D., D.Sc., Institute of Electron Technology;
Tomasz Gutt, Ph.D., Institute of Electron Technology;
Krzysztof Piskorski, M.Sc., Institute of Electron Technology;
Pawel Borowicz, Ph.D., Institute of Electron Technology;
Mietek Bakowski, Acreo AB
10:40
Influence of Ion Implantation in SiC on the Channel Mobility in Lateral N-Channel MOSFETs
Christian Strenger, The Wide Bandgap Semiconductor Alliance (WISEA);
Viktoryia Uhnevionak, The Wide Bandgap Semiconductor Alliance (WISEA);
Alex Burenkov, The Wide Bandgap Semiconductor Alliance (WISEA);
Anton Bauer, The Wide Bandgap Semiconductor Alliance (WISEA);
Peter Pichler, Chair of Electron Devices University Erlangen-Nuremberg;
Tobias Erlbacher, Chair of Electron Devices University Erlangen-Nuremberg;
Heiner Ryssel, Fraunhofer Institute for Integrated Systems and Device Technology;
Lothar Frey, Fraunhofer Institute for Integrated Systems and Device Technology
11:00
On the Temperature Dependence of the Hall Factor in n-Channel 4H-SiC MOSFETs
Viktoryia Uhnevionak, Fraunhofer Institute for Integrated Systems and Device Technology;
Alex Burenkov, Fraunhofer Institute for Integrated Systems and Device Technology;
Christian Strenger, Fraunhofer Institute for Integrated Systems and Device Technology;
Anton Bauer, Fraunhofer Institute for Integrated Systems and Device Technology;
Peter Pichler, Fraunhofer Institute for Integrated Systems and Device Technology
