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On the Temperature Dependence of the Hall Factor in n-Channel 4H-SiC MOSFETs

Monday, October 28, 2013: 11:00
Continental 9, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Viktoryia Uhnevionak , Fraunhofer Institute for Integrated Systems and Device Technology, Erlangen, Germany
Alex Burenkov , Fraunhofer Institute for Integrated Systems and Device Technology
Christian Strenger , Fraunhofer Institute for Integrated Systems and Device Technology, Erlangen, Germany
Anton Bauer , Fraunhofer Institute for Integrated Systems and Device Technology
Peter Pichler , Fraunhofer Institute for Integrated Systems and Device Technology

Abstract:

See more of: SiC MOS Power Devices
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