1899
Influence of Ion Implantation in SiC on the Channel Mobility in Lateral N-Channel MOSFETs
Monday, October 28, 2013: 10:40
Continental 9, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Christian Strenger
,
The Wide Bandgap Semiconductor Alliance (WISEA), Erlangen, Germany
Viktoryia Uhnevionak
,
The Wide Bandgap Semiconductor Alliance (WISEA), Erlangen, Germany
Alex Burenkov
,
The Wide Bandgap Semiconductor Alliance (WISEA)
Anton Bauer
,
The Wide Bandgap Semiconductor Alliance (WISEA)
Peter Pichler
,
Chair of Electron Devices University Erlangen-Nuremberg
Tobias Erlbacher
,
Chair of Electron Devices University Erlangen-Nuremberg
Heiner Ryssel
,
Fraunhofer Institute for Integrated Systems and Device Technology
Lothar Frey
,
Fraunhofer Institute for Integrated Systems and Device Technology
