2014
(Invited) Improved Operation Characteristics in Charge-Trapping Flash Memory Devices with Engineered Dielectric Stack and SiGe Channel
(Invited) Improved Operation Characteristics in Charge-Trapping Flash Memory Devices with Engineered Dielectric Stack and SiGe Channel
Thursday, October 31, 2013: 10:30
Golden Gate 1, Tower 3, Lobby Level (Hilton San Francisco Union Square)
Abstract:
- E5-2014 (63.9KB) - Abstract Text