Flash Memories

Thursday, October 31, 2013: 10:30-12:00
Golden Gate 1, Tower 3, Lobby Level (Hilton San Francisco Union Square)
Chairs:
Kiyoteru Kobayashi and Shoso Shingubara
10:30
2014
(Invited) Improved Operation Characteristics in Charge-Trapping Flash Memory Devices with Engineered Dielectric Stack and SiGe Channel
Zong-Hao Ye, MS, National Tsing Hua University; Li-Jung Liu, PhD, National Tsing Hua University; Kuei-Shu Chang-Liao, PhD, National Tsing Hua University
11:00
2015
Optimized Contact Engineering to Maximize Cell Current in NAND Flash Memory Technology
Joong Ho Yoon, Samsung Electronics Co. LTD; Hong-Sig Kim, Samsung Electronics Co., Ltd; Yung Sam Kim, Samsung Electronics Co. LTD; Jun Kyoung Lee, Samsung Electronics Co. LTD; Eui Sung Han, Samsung Electronics Co. LTD; YeonUn Jeong, Samsung Electronics Co. LTD; Young Ik Lee, Samsung Electronics Co. LTD; Sung Jin Jang, Samsung Electronics Co. LTD; Hyun Gil Kim, Samsung Electronics Co. LTD; Sung Wook Park, Samsung Electronics Co. LTD; Sae Hui Park, Samsung Electronics Co. LTD; Hae-Bum Lee, Ph.D., Samsung Electronics Co., Ltd; Kyu-Pil Lee, Ph.D., Samsung Electronics Co., Ltd; In-soo Cho, Samsung Electronics Co. LTD.
11:20
2016
CdSe Embedded ZrHfO Gate Dielectric Nonvolatile Memories – Charge Trapping and Breakdown Studies
Chi-Chou Lin, Texas A&M University; Yue Kuo, Texas A&M University
11:40
2017
High-Performance Molecular FLASH Memory With Redox-Active Molecules
Qiliang Li, PhD, George Mason University
See more of: E5: Nonvolatile Memories
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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