2158
(Invited) Optimization of WAl2O3Cu(-Te) Material Stack for High-Performance Conductive-Bridging Memory Cells
(Invited) Optimization of WAl2O3Cu(-Te) Material Stack for High-Performance Conductive-Bridging Memory Cells
Tuesday, October 29, 2013: 10:50
Union Square 22, Tower 3, 4th Floor (Hilton San Francisco Union Square)
Abstract:
- E10-2158 (198.4KB) - Abstract Text