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(Invited) SiC MOS Interface States: Difference between Si Face and C Face

Monday, October 28, 2013: 10:20
Union Square 22, Tower 3, 4th Floor (Hilton San Francisco Union Square)
Takahide Umeda , University of Tsukuba, Tsukuba, Japan
Mitsuo Okamoto , National Institute of Advanced Industrial Science and Technology
Ryouji Kosugi , National Institute of Advanced Industrial Science and Technology
Shinsuke Harada , National Institute of Advanced Industrial Science and Technology
Ryo Arai , University of Tsukuba
Yoshihiro Sato , University of Tsukuba
Takahiro Makino , Japan Atomic Energy Agency
Takeshi Ohshima , Japan Atomic Energy Agency

Abstract:

See more of: Defects, Traps, and Reliability
See more of: E10: Semiconductors, Dielectrics, and Metals for Nanoelectronics 11
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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