2143
Reliability of La-Silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT

Monday, October 28, 2013: 10:50
Union Square 22, Tower 3, 4th Floor (Hilton San Francisco Union Square)
Shuhei Hosoda , Tokyo Institute of Technology, Yokohama, Japan
Kamale Tuokedaerhan , Tokyo Institute of Technology
Kuniyuki Kakushima , Tokyo Institute of Technology
Yoshinori Kataoka , Tokyo Institute of Technology
Akira Nishiyama , Tokyo Institute of Technology
Nobuyuki Sugii , Tokyo Institute of Technology
Hitoshi Wakabayashi , Tokyo Institute of Technology
Kazuo Tsutsui , Tokyo Institute of Technology
Kenji Natori , Tokyo Institute of Technology
Hiroshi Iwai , Tokyo Institute of Technology

Abstract:

See more of: Defects, Traps, and Reliability
See more of: E10: Semiconductors, Dielectrics, and Metals for Nanoelectronics 11
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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