Defects, Traps, and Reliability
Monday, October 28, 2013: 08:00-11:40
Union Square 22, Tower 3, 4th Floor (Hilton San Francisco Union Square)
Chairs:
Moshe Eizenberg
,
Durga Misra, Ph.D.
and
Samares Kar
08:10
Effects of N-Rich TiN Capping Layer on Reliability in Gate-Last High-k/Metal Gate MOSFETs
Kidan Bae, Samsung Electronics Co.;
Kyung Taek Lee, Samsung Electronics Co.;
Hyun Chul Sagong, Samsung Electronics Co.;
Minhyeok Choe, Samsung Electronics Co.;
Hyunwoo Lee, Samsung Electronics Co.;
Sungeun Kim, Samsung Electronics Co.;
Kwang-Soo Kim, Samsung Semiconductor Institute of Technology;
Junekyun Park, Samsung Electronics Co.;
Sangwoo Pae, Samsung Electronics Co.;
Jongwoo Park, Samsung Electronics Co.
08:50
Reliability of ALD Hf1-XZrxO2 Deposited by Intermediate Annealing or Intermediate Plasma Treatment
Mdnasiruddin Bhuyian, New Jersey Institute of Technology;
Durga Misra, Ph.D., New Jersey Institute of Technology;
Kandabara Tapily, TEL Technology Center, America;
Robert Clark, TEL Technology Center, America;
Steve Consiglio, TEL Technology Center, America;
Cory Wajda, TEL Technology Center, America;
G. Nakamura, TEL Technology Center, America;
Gert Leusink, TEL Technology Center, America
09:10
(Invited) Multiphonon Processes as the Origin of Reliability Issues
Wolfgang Goes, Institute for Microelectronics;
Maria Toledano-Luque, imec;
Franz Schanovsky, Institute for Microelectronics;
Markus Bina, Institute for Microelectronics;
Oskar Baumgartner, Institute for Microelectronics;
Ben Kaczer, imec;
Tibor Grasser, Institute for Microelectronics
10:20
(Invited) SiC MOS Interface States: Difference between Si Face and C Face
Takahide Umeda, University of Tsukuba;
Mitsuo Okamoto, National Institute of Advanced Industrial Science and Technology;
Ryouji Kosugi, National Institute of Advanced Industrial Science and Technology;
Shinsuke Harada, National Institute of Advanced Industrial Science and Technology;
Ryo Arai, University of Tsukuba;
Yoshihiro Sato, University of Tsukuba;
Takahiro Makino, Japan Atomic Energy Agency;
Takeshi Ohshima, Japan Atomic Energy Agency
10:50
Reliability of La-Silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT
Shuhei Hosoda, Tokyo Institute of Technology;
Kamale Tuokedaerhan, Tokyo Institute of Technology;
Kuniyuki Kakushima, Tokyo Institute of Technology;
Yoshinori Kataoka, Tokyo Institute of Technology;
Akira Nishiyama, Tokyo Institute of Technology;
Nobuyuki Sugii, Tokyo Institute of Technology;
Hitoshi Wakabayashi, Tokyo Institute of Technology;
Kazuo Tsutsui, Tokyo Institute of Technology;
Kenji Natori, Tokyo Institute of Technology;
Hiroshi Iwai, Tokyo Institute of Technology
