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Reliability of ALD Hf1-XZrxO2 Deposited by Intermediate Annealing or Intermediate Plasma Treatment

Monday, October 28, 2013: 08:50
Union Square 22, Tower 3, 4th Floor (Hilton San Francisco Union Square)
Mdnasiruddin Bhuyian , New Jersey Institute of Technology
Durga Misra, Ph.D. , New Jersey Institute of Technology, Newark, NJ
Kandabara Tapily , 255 Fuller Road, suite 244, TEL Technology Center, America, Albany, NY
Robert Clark , TEL Technology Center, America
Steve Consiglio , TEL Technology Center, America
Cory Wajda , TEL Technology Center, America
G. Nakamura , TEL Technology Center, America
Gert Leusink , TEL Technology Center, America

Abstract:

See more of: Defects, Traps, and Reliability
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